Contributo in Atti di convegno

1.D. Barettin, B. Lassen, and M. Willatzen, Electromechanical fields in GaN/AlN Wurtzite Quantum Dots, Poster, Physics-Based Mathematical Models of Low-Dimensional Semiconductor Nanostructures: Analisys and Computation (Banff 2007). 2.B. Lassen, M. Willatzen, D. Barettin, R. V. N. Melnik, and L. C. Lew Yan Voon, Piezoelectric effect and spontaneous polarization in GaN/AlN quantum dots, Talk, Physics-Based Mathematical Models of Low- Dimensional Semiconductor Nanostructures: Analisys and Computation (Banff 2007). 3.L.C. Lew Yan Voon, B. Lassen, D. Barettin, and M. Willatzen, Semiconductor quantum dots and piezoelectric models, Talk, CLACSA XIII (Santa Maria, Colombia 2007). 4.M. Willatzen, B. Lassen, D. Barettin, and L.C. Lew Yan Voon Piezoelectric models for semiconductors quantum dots, Talk, APS March Meeting (New Orleans, Louisiana 2008). 5.M. Willatzen, B. Lassen, D. Barettin, and L.C. Lew Yan Voon Conference ContributionsPiezoelectric models for semiconductors quantum dots, W28.00009, Proceeding of the American Physisc Society, New Orleans, Louisiana, USA, March 10-14 (2008). 6.L.C. Lew Yan Voon, B. Lassen, D. Barettin, and M. Willatzen, Semiconductor quantum dots and piezoelectric models, Proceeding of CLACSA XIII (Santa Maria, Colombia 2008). 7.D. Barettin, B. Lassen, M. Willatzen, R.V.N. Melnik, and L.C. Lew Yan Voon, Three-dimensional strain distributions due to anisotropic effects in InGaAs semiconductor quantum dots, Talk, WCCM8-ECCOMAS (Venice 2008). 8.J. Houmark, D. Barettin, B. Lassen, T. R. Nielsen, J. Mork, A.-P. Jauho, and M. Willatzen, Analysis of quantum dot EIT based on eight-band k*p theory, Poster, ICPS (Rio de Jeneiro, 2008). 9.B. Lassen, D. Barettin, and M. Willatzen, Cylindrical symmetry and spurious solutions in 8 band k*p theory, Poster, ICPS (Rio de Jeneiro, 2008). 10. D. Barettin, S. Madsen, B. Lassen, and M. Willatzen, Comparison of wurtzite atomistic and piezoelectric continuum strain models: Implications for optical properties, Poster, PLMN09 (Lecce 2009). 11. B. Lassen, M. Willatzen, and D. Barettin, Band-mixing and strain effects in InAs/GaAs quantum ring, Talk, PLMN09 (Lecce 2009). 12. D. Barettin, S. Madsen, B. Lassen, and M. Willatzen, Comparison of atomistic and continuum quantum-dot elastic models and implications for optoelectronic properties, Poster, ICPS (Seoul, 2010). 13. D. Barettin, A. Pecchia, G. Penazzi, M. Auf der Maur, B. Lassen, M. Willatzen, and A. di Carlo, Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots, Talk, Nusod (Rome, 2011). 14. M. Willatzen, B. Lassen, S. Madsen, D. Barettin, Strain and piezoelectric effects in quantum-dot structures, Invited Talk, Nusod (Rome, 2011). 15. D. Barettin, A. Pecchia, G. Penazzi, M. Auf der Maur, B. Lassen, M. Willatzen, and A. Di Carlo, Comparison of continuum k*p and atomistic Tight Binding methods for the analysis of InAs/GaAs quantum dots, TMCS III (Leeds, 2012). 16. D. Barettin, A. V. Platonov, A. Pecchia, V. N. Kats, G. E. Cirlin, I. P. Soshnikov, A. D. Bouravleuv, L. Besombes, H. Mariette, M. Auf der Maur, A. di Carlo, Modelling of GaAs quantum dot embedded in a polymorph AlGaAs nano wire, Talk Nusod (Vancouver, 2013). 17. Daniele Barettin , Matthias Auf der Maur , Alessandro Pecchia , and Aldo di Carlo, Realistic modeling of nanostructured quantum dots from experimental results, 22nd Int. Symp. “Nanostructures: Physics andTechnology” (Saint Petersburg, Russia 2014 ). 18. M. Auf der Maur, D. Barettin, A. Pecchia and Aldo di Carlo, Random alloy fluctuations effects on the spontaneous emission properties of a InGaN/GaN LED, 16 th International Conference Laser Optics (Saint Petersburg, Russia 2014). 19. M Auf der Maur, D Barettin, A Pecchia, F Sacconi, A Di Carlo, Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength, Numerical Simulation of Optoelectronic Devices, 2014. 20. Daniele Barettin, Matthias Auf der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F Tsatsulnikov, Alexei V Sakharov, Wsevolod V Lundin, AE Nikolaev, Nikolay Cherkashin, Martin J Hÿtch, Sergey Yu Karpov, Aldo di Carlo, Realistic model of a InGaN quantum-dots active region in a LED structure, 23rd Int. Symp. “Nanostructures: Physics and Technology” (Saint Petersburg, Russia 2015). 21. Daniele Barettin, Matthias Auf der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F Tsatsulnikov, Alexei V Sakharov, Wsevolod V Lundin, AE Nikolaev, Nikolay Cherkashin, Martin J Hÿtch, Sergey Yu Karpov, Aldo di Carlo, Realistic model of LED structure with InGaN quantum-dots active region, IEEE 15th International Conference on Nanotechnology (IEEE-NANO) (Rome 2015). 22. D. Barettin, N. Cherkashin, M. Auf der Maur, A.V. Sakharov, A. E. Nikoalev, A.F. Tsatsunikov, A. Pecchia, and A. di Carlo, Modeling a new geometry for blue-green LEDs: a quantum-dot sandwich, 24th Int. Symp. “Nanostructures: Physics and Technology” (Saint Petersburg, Russia 2016). 23. D. Barettin, M. Auf der Maur, A. Pecchia, A.F. Tsatsuknikov, A.V. Sakharov, W.V. Lundin, A.E. Nikolaev, M. Korytov, N. Cherkashin, M.J. Hytch, and S. Yu. Karpov, Carrier transport and emission efficiency in InGaN quantum-dot based LEDs, 25th Int. Symp. “Nanostructures: Physics and Technology” (Saint Petersburg, Russia 2017). 24. Daniele Barettin (Invited Talk) Realistic modeling of quantum-dot heterostructures: theory and applications, TERAMETANANO-2, Terahertz Emission, Metamaterials and Nanophotonics (Venice 2017). 25. D. Barettin, M. Willatzen, S. Kadkhodazedeh, A. Pecchia, M. Auf der Mauer, and E. S. Semenova, A valence force field – Monte Carlo algorithm for quantum-dot growth modeling, Nusod (Copenhagen 2017). 26. Daniele Barettin (Invited Talk) 1st International Workshop on Crystal- Phase Structures in Nanowires, Lyngb, Copenhagen, Denmark (Copenhagen 2019). 27. Daniele Barettin (Invited Talk) School on Advanced Light-Emitting and Optical Materials (SLALOM), Itmo University, Saint Petersburg, Russia (Saint Petersburg 2020).28. Daniele Barettin (Invited Talk) 6th International Conference on Physics of 2D materials based electronics and optoelectronics, Nanophotonics Modelling for Perovskite Solar Cells (Yerevan, Armenia, 2022). 29. Daniele Barettin (Invited Talk) 7th International Conference on Physics of 2D materials based electronics and optoelectronics, Three degrees of quantum confinement in Wurtzite InGaAs/AlGaAs nanostructures (Tirana, Albania, 2023). 30. Daniele Barettin (Invited Talk) The International Summer Conference on Theoretical Physics, Wurtzite GaAs and InAs quantum dots in direct band gap AlGaAs wurtzite nanowires (Moscow, Russia, 2023) 31. Daniele Barettin (Invited Talk) International Conference in Quantum Light & Nanophysics, Three degrees of quantum confinement in Wurtzite InGaAs/AlGaAs nanostructures (Abu Dhabi – United Arab Emirates, 2024).

Peer-reviewed Proceeding Publications

1.D. Barettin, B. Lassen, and M. Willatzen, Electromechanical fields in Ga/AlN Wurtzite Quantum Dots, J. Phys. Conf. Ser. 107, 012001 (2008). 2.B. Lassen, M. Willatzen, D. Barettin, R. V. N. Melnik, and L. C. Lew Yan Voon, Piezoelectric effect and spontaneous polarization in GaN/AlN quantum dots, J. Phys. Conf. Ser. 107, 012008 (2008). 3.B. Lassen, D. Barettin, M. Willatzen, Strain in inhomogeneous InAs/GaAs quantum-dot structures. Journal of Physics: Conference Series 367 (1), 012007 (2012). 4.E.S. Semenova, I.V. Kulkova, S. Kadkhodazadeh, D. Barettin, O. Kopylov, A. Cagliani, K. Almdal, M. Willatzen, K. Yvind, Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 mm wavelenght range, SPIE OPTO, 899606-899606-9 (2014). 5.Orsini A., Pettinato S., Barettin D., Piccardi A., Ponticelli G.S., and Salvatori, S., SiC and diamond membrane based pressure sensors for harsh environments, 2021 IEEE International Workshop on Metrology for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2021 – Proceedings, 161- 165 (2021).