Contributo in Atti di convegno

1.D. Barettin, B. Lassen, and M. Willatzen, Electromechanical fields in
GaN/AlN Wurtzite Quantum Dots, Poster, Physics-Based Mathematical
Models of Low-Dimensional Semiconductor Nanostructures: Analisys
and Computation (Banff 2007).
2.B. Lassen, M. Willatzen, D. Barettin, R. V. N. Melnik, and L. C. Lew Yan
Voon, Piezoelectric effect and spontaneous polarization in GaN/AlN
quantum dots, Talk, Physics-Based Mathematical Models of Low-
Dimensional Semiconductor Nanostructures: Analisys and Computation
(Banff 2007).
3.L.C. Lew Yan Voon, B. Lassen, D. Barettin, and M. Willatzen,
Semiconductor quantum dots and piezoelectric models, Talk, CLACSA
XIII (Santa Maria, Colombia 2007).
4.M. Willatzen, B. Lassen, D. Barettin, and L.C. Lew Yan Voon
Piezoelectric models for semiconductors quantum dots, Talk, APS
March Meeting (New Orleans, Louisiana 2008).
5.M. Willatzen, B. Lassen, D. Barettin, and L.C. Lew Yan Voon
Conference
ContributionsPiezoelectric models for semiconductors quantum dots, W28.00009,
Proceeding of the American Physisc Society, New Orleans, Louisiana,
USA, March 10-14 (2008).
6.L.C. Lew Yan Voon, B. Lassen, D. Barettin, and M. Willatzen,
Semiconductor quantum dots and piezoelectric models, Proceeding of
CLACSA XIII (Santa Maria, Colombia 2008).
7.D. Barettin, B. Lassen, M. Willatzen, R.V.N. Melnik, and L.C. Lew Yan
Voon, Three-dimensional strain distributions due to anisotropic effects in
InGaAs semiconductor quantum dots, Talk, WCCM8-ECCOMAS
(Venice 2008).
8.J. Houmark, D. Barettin, B. Lassen, T. R. Nielsen, J. Mork, A.-P. Jauho,
and M. Willatzen, Analysis of quantum dot EIT based on eight-band k*p
theory, Poster, ICPS (Rio de Jeneiro, 2008).
9.B. Lassen, D. Barettin, and M. Willatzen, Cylindrical symmetry and
spurious solutions in 8 band k*p theory, Poster, ICPS (Rio de Jeneiro,
2008).
10. D. Barettin, S. Madsen, B. Lassen, and M. Willatzen, Comparison of
wurtzite atomistic and piezoelectric continuum strain models:
Implications for optical properties, Poster, PLMN09 (Lecce 2009).
11. B. Lassen, M. Willatzen, and D. Barettin, Band-mixing and strain effects
in InAs/GaAs quantum ring, Talk, PLMN09 (Lecce 2009).
12. D. Barettin, S. Madsen, B. Lassen, and M. Willatzen, Comparison of
atomistic and continuum quantum-dot elastic models and implications
for optoelectronic properties, Poster, ICPS (Seoul, 2010).
13. D. Barettin, A. Pecchia, G. Penazzi, M. Auf der Maur, B. Lassen,
M. Willatzen, and A. di Carlo, Comparison of continuum and atomistic
methods for the analysis of InAs/GaAs quantum dots, Talk,
Nusod (Rome, 2011).
14. M. Willatzen, B. Lassen, S. Madsen, D. Barettin, Strain and
piezoelectric effects in quantum-dot structures, Invited Talk, Nusod
(Rome, 2011).
15. D. Barettin, A. Pecchia, G. Penazzi, M. Auf der Maur, B. Lassen, M.
Willatzen, and A. Di Carlo, Comparison of continuum k*p and atomistic
Tight Binding methods for the analysis of InAs/GaAs quantum dots,
TMCS III (Leeds, 2012).
16. D. Barettin, A. V. Platonov, A. Pecchia, V. N. Kats, G. E. Cirlin, I. P.
Soshnikov, A. D. Bouravleuv, L. Besombes, H. Mariette, M. Auf der
Maur, A. di Carlo, Modelling of GaAs quantum dot embedded in a
polymorph AlGaAs nano wire, Talk Nusod (Vancouver, 2013).
17. Daniele Barettin , Matthias Auf der Maur , Alessandro Pecchia , and
Aldo di Carlo, Realistic modeling of nanostructured quantum dots from
experimental results, 22nd Int. Symp. “Nanostructures: Physics andTechnology” (Saint Petersburg, Russia 2014 ).
18. M. Auf der Maur, D. Barettin, A. Pecchia and Aldo di Carlo, Random
alloy fluctuations effects on the spontaneous emission properties of a
InGaN/GaN LED, 16 th International Conference Laser Optics (Saint
Petersburg, Russia 2014).
19. M Auf der Maur, D Barettin, A Pecchia, F Sacconi, A Di Carlo, Effect of
alloy fluctuations in InGaN/GaN quantum wells on optical emission
strength, Numerical Simulation of Optoelectronic Devices, 2014.
20. Daniele Barettin, Matthias Auf der Maur, Alessandro Pecchia, Walter
Rodrigues, Andrei F Tsatsulnikov, Alexei V Sakharov, Wsevolod V
Lundin, AE Nikolaev, Nikolay Cherkashin, Martin J Hÿtch, Sergey Yu
Karpov, Aldo di Carlo, Realistic model of a InGaN quantum-dots active
region in a LED structure, 23rd Int. Symp. “Nanostructures: Physics and
Technology” (Saint Petersburg, Russia 2015).
21. Daniele Barettin, Matthias Auf der Maur, Alessandro Pecchia, Walter
Rodrigues, Andrei F Tsatsulnikov, Alexei V Sakharov, Wsevolod V
Lundin, AE Nikolaev, Nikolay Cherkashin, Martin J Hÿtch, Sergey Yu
Karpov, Aldo di Carlo, Realistic model of LED structure with InGaN
quantum-dots active region, IEEE 15th International Conference on
Nanotechnology (IEEE-NANO) (Rome 2015).
22. D. Barettin, N. Cherkashin, M. Auf der Maur, A.V. Sakharov, A. E.
Nikoalev, A.F. Tsatsunikov, A. Pecchia, and A. di Carlo, Modeling a
new geometry for blue-green LEDs: a quantum-dot sandwich, 24th Int.
Symp. “Nanostructures: Physics and Technology” (Saint Petersburg,
Russia 2016).
23. D. Barettin, M. Auf der Maur, A. Pecchia, A.F. Tsatsuknikov, A.V.
Sakharov, W.V. Lundin, A.E. Nikolaev, M. Korytov, N. Cherkashin, M.J.
Hytch, and S. Yu. Karpov, Carrier transport and emission efficiency in
InGaN quantum-dot based LEDs, 25th Int. Symp. “Nanostructures:
Physics and Technology” (Saint Petersburg, Russia 2017).
24. Daniele Barettin (Invited Talk) Realistic modeling of quantum-dot
heterostructures: theory and applications, TERAMETANANO-2,
Terahertz Emission, Metamaterials and Nanophotonics (Venice 2017).
25. D. Barettin, M. Willatzen, S. Kadkhodazedeh, A. Pecchia, M. Auf der
Mauer, and E. S. Semenova, A valence force field – Monte Carlo
algorithm for quantum-dot growth modeling, Nusod (Copenhagen 2017).
26. Daniele Barettin (Invited Talk) 1st International Workshop on Crystal-
Phase Structures in Nanowires, Lyngb, Copenhagen, Denmark
(Copenhagen 2019).
27. Daniele Barettin (Invited Talk) School on Advanced Light-Emitting and
Optical Materials (SLALOM), Itmo University, Saint Petersburg, Russia
(Saint Petersburg 2020).28. Daniele Barettin (Invited Talk) 6th International Conference on Physics of
2D materials based electronics and optoelectronics, Nanophotonics
Modelling for Perovskite Solar Cells (Yerevan, Armenia, 2022).
29. Daniele Barettin (Invited Talk) 7th International Conference on Physics of
2D materials based electronics and optoelectronics, Three degrees of
quantum confinement in Wurtzite InGaAs/AlGaAs nanostructures
(Tirana, Albania, 2023).
30. Daniele Barettin (Invited Talk) The International Summer Conference on
Theoretical Physics, Wurtzite GaAs and InAs quantum dots in direct
band gap AlGaAs wurtzite nanowires (Moscow, Russia, 2023)
31. Daniele Barettin (Invited Talk) International Conference in Quantum
Light & Nanophysics, Three degrees of quantum confinement in
Wurtzite InGaAs/AlGaAs nanostructures (Abu Dhabi – United Arab
Emirates, 2024).

Peer-reviewed Proceeding Publications

1.D. Barettin, B. Lassen, and M. Willatzen, Electromechanical fields in
Ga/AlN Wurtzite Quantum Dots, J. Phys. Conf. Ser. 107, 012001 (2008).
2.B. Lassen, M. Willatzen, D. Barettin, R. V. N. Melnik, and L. C. Lew Yan
Voon, Piezoelectric effect and spontaneous polarization in GaN/AlN
quantum dots, J. Phys. Conf. Ser. 107, 012008 (2008).
3.B. Lassen, D. Barettin, M. Willatzen, Strain in inhomogeneous
InAs/GaAs quantum-dot structures.
Journal of Physics: Conference Series 367 (1), 012007 (2012).
4.E.S. Semenova, I.V. Kulkova, S. Kadkhodazadeh, D. Barettin, O.
Kopylov, A. Cagliani, K. Almdal, M. Willatzen, K. Yvind, Epitaxial growth
of quantum dots on InP for device applications operating at the 1.55 mm
wavelenght range, SPIE OPTO, 899606-899606-9 (2014).
5.Orsini A., Pettinato S., Barettin D., Piccardi A., Ponticelli G.S., and
Salvatori, S., SiC and diamond membrane based pressure sensors for
harsh environments, 2021 IEEE International Workshop on Metrology
for Industry 4.0 and IoT, MetroInd 4.0 and IoT 2021 – Proceedings, 161-
165 (2021).